Photovoltaic, optically immersed detectors

Features

• Ambient temperature operation
• No bias required
• Short response time
• No flicker noise
• Operation from DC to VHF
• Perfect match to fast electronics
• Wide dynamic range
• Low cost
• Custom design upon request

Description

The PVI-n (where n is wavelength λop, in micrometers, to which the detector is optimized) series photodetectors are IR photovoltaic detectors, which have been optically immersed to high refractive index GaAs (or CdZnTe) hyperhemispherical (standard) or hemispherical (option) lenses. These devices can be optimized for the maximum performance anywhere within 2 to 11 µm range. High performance and stability were achieved by using a variable gap (Hg,Cd,Zn)Te semiconductors, optimized doping and improved surface processing. Custom devices with quadrant cells, multielement arrays, various immersion lenses, windows and optical filters are available on request. Standard detectors are available in modified TO-39 or BNC-based packages with no windows. Other packages, windows and connectors are available upon request. See application notes for more details.