Photovoltaic multiple junction detectors optically immersed
Features
- Ambient temperature operation
- No bias required
- Short response time
- No flicker noise
- Operation from DC to VHF
- Perfect match to fast electronics
- Wide dynamic range
- Large area devices
- Low cost
- Custom design upon request
Description
The PVMI-n (where n is wavelength λop, in micrometers, to which the detector is optimized) series photodetectors are multiple heterojunction photovoltaic IR detectors, which have been optically immersed to high refractive index GaAs (or CdZnTe) hyperhemispherical (standard) or hemispherical (option) lenses. These devices especially useful as large area detectors operating within 8 to 12 µm range. High performance and stability were achieved by using a variable gap (Hg,Cd,Zn)Te semiconductors, optimized doping and improved surface processing. Custom devices with quadrant cells, multielement arrays, various immersion lenses, windows and optical filters are available on request.
Standard detectors are available in modified TO-39 or BNC-based packages with no windows. Other packages, windows and connectors are available upon request.
